Перегляд за автором "Stanchu, H.V."

Сортувати за: Порядок: Результатів:

  • Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios 
    Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and ...
  • Structural properties of chalcogenide glasses As₂Se₃ doped with manganese 
    Paiuk, O.P.; Revutska, L.O.; Stronski, A.V.; Gudymenko, A.Yo.; Stanchu, H.V.; Gubanova, A.A.; Kryskov, Ts.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper presents the results of studying structural properties inherent to chalcogenide glasses doped with manganese. Investigations of the structure were carried out using Raman spectroscopy and X-ray diffraction. The ...